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| SMD Type Logic level TOPFET KUK130-50DL TO-263 Features TrenchMOS output stage Current limiting Overload protection + .2 8 .7 -00.2 + .1 1 .2 7 -00.1 Transistors IC Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Overtemperature protection Protection latched reset by input 5 V logic compatible input level +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 circuits derived from input Low operating input current permits direct drive by micro-controller ESD protection on all pins Overvoltage clamping for turn off of inductive loads 2.54 +0.2 -0.2 +0.1 5.08-0.1 + .2 2 .5 4 -00.2 Control of output stage and supply of overload protection + .2 5 .2 8 -00.2 + .2 1 5 .2 5 -00.2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Continuous drain source voltage Continuous drain current VIS = 5 V; Tmb = 25 Continuous drain current VIS = 5 V; Tmb Continuous input current Repetitive peak input current *1 Total power dissipation Tmb Storage temperature Continuous junction temperature2 normal operation Case temperature during soldering Electrostatic discharge capacitor voltage *2 *1 a 0.1, tp = 300 is 25 121 Symbol VDS ID ID II IIRM PD Tstg Tj Tsold VC Rating 50 selflimited 20 -5 to 5 -50 to 50 90 -55 To 175 150 260 2 kV Unit V A A mA mA W *2 C = 250 pF; R = 1.5 kU 5 .6 0 11 Input Gate 22 Drain Drain 33 Source Source www.kexin.com.cn 1 SMD Type KUK130-50DL Electrical Characteristics Ta = 25 Parameter Non-repetitive clamping energy Repetitive clamping energy Drain source voltage Drain-source clamping voltage Symbol EDSM EDRM VDS V(CL)DSS IDM = 20 A; VDD IDM = 20 A; VDD 4V VIS 5.5 V Testconditons 20 V;Tmb 20 V;Tmb 25 95 ; f = 250 Hz Transistors IC Min Typ Max 350 45 Unit mJ mJ V V 0 50 300 is; a 0.01 50 60 35 VIS = 0 V;ID = 10 mA VIS = 0 V;IDM = 4 A; tp 70 100 V iA iA mU mU A A W is Drain source leakage current IDSS VDS = 40 V VDS = 40 V;Tmb = 25 0.1 0.01;IDM = 10 A 22 28.5 5.5 V;-40 Tmb 150 21 75 200 150 VDS = 5 V; ID = 1 mA VDS = 5 V; ID = 1 mA;Tmb = 25 0.6 1.1 100 80 200 130 1.5 10 5.5 33 25 50 VIS = 0 V 60 50 1.25 minimum footprint FR4 PCB 50 1.6 220 195 400 250 2 40 185 380 170 43 10 52 28 57 65 250 600 Drain-source resistance RDS(ON) VIS VIS 4.4 V; tp 4.4 V; tp 300 is; a 300 is;Tmb = 25 Drain current limiting Overload power threshold Characteristic time Threshold junction temperature Input threshold voltage ID PD(TO) TDSC Tj(TO) VIS(TO) VDS = 13 V 4.4 V VIS device trips if PD > PD(TO) 2.4 2.1 400 330 650 430 2.9 100 8.5 V V Input supply current IIS normal operation;VIS = 5 V normal operation;VIS = 4 V iA Input supply current Protection reset voltage Latch reset time Input clamping voltage Input series resistance to gate of power MOSFET Turn-on delay time Rise time Turn-off delay time Fall time Junction to mounting base Junction to ambient IISL VISR tlr V(CL)IS RIG td on tr td off tf Rth j-mb Rth j-a protection latched;VIS = 5 V protection latched;VIS = 3 V reset time tr 100 is V is V kU VIS1 = 5 V, VIS2 < 1 V II = 1.5 mA II = 1.5 mA;Tmb = 25 VIS = 5 V 50 100 120 100 1.39 K/W K/W is 2 www.kexin.com.cn |
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